Digital Ultra Low Voltage High Speed Logic

نویسندگان

  • Omid Mirmotahari
  • Yngvar Berg
چکیده

Low power is becoming more and more crucial and in many aspects becoming the number 1 priority when designing new applications. Ultra low voltage CMOS is an approach for producing very low-power CMOS circuits by reducing the supply voltage to several hundred millivolts [1, 2]. To maintain good performance at low supply voltages, the threshold voltages of MOS transistors must also be reduced [3–5]. Unfortunately, this requires a change in the CMOS fabrication process. Because variations in Vth, when operating in a low-Vdd and low-Vth environment, cause significant variations in performance, the ultra low power approach lies on the biasing of transistor bodies to adjust thresholds [3]. The primary drawbacks to ultra low power CMOS are that it requires (i) a change in the fabrication process, (ii) additional circuitry to adjust body potential, and (iii) additional routing of separate well-voltage (Vp-well and Vn-well) references.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Static Differential Ultra Low-Voltage Domino CMOS logic for High Speed Applications

In this paper we present a novel static differential ultra low-voltage (ULV) CMOS logic style for High-Speed applications . The proposed logic style is aimed for high speed serial adders in ultra low-voltage applications. The differential ultra low-voltage inverter presented have less than 10% of the delay than standard CMOS inverters for supply voltages less than 500mV . The simulated data pre...

متن کامل

High Speed and Ultra Low-voltage CMOS NAND and NOR domino gates

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented. Keywords—Low-Voltage, High-Spee...

متن کامل

High Speed and Ultra Low-voltage CMOS Domino Carry gates

Abstract: In this paper we present ultra low-voltage and high speed CMOS domino Carry gates. For supply voltages below 325mV the delay for the proposed ultra low-voltage Carry gates are approximately 5% relative to a complementary CMOS Carry gate. Furthermore, the Energy Delay Product is less than 1% relative to complementary CMOS Carry gate at the same supply voltage. Different domino Carry ga...

متن کامل

Novel Static Differential ultra Low-Voltage and High Speed Domino CMOS logic

Abstract: In this paper we present a novel static differential ultra low-voltage (ULV) CMOS logic style. Simulated data for the logic style is presented and compared to related ULV logic styles and complementary CMOS gates. The proposed logic style is aimed for high speed serial adders in ultra low-voltage applications. In terms of energy delay product (EDP) the logic style offers a significant...

متن کامل

Novel Static Ultra Low-Voltage and High Speed CMOS Boolean Gates

In this paper we present robust and high performance static ultra low-voltage CMOS binary logic. The delay of the ultra low-voltage logic presented are less than 10% of the delay of standard CMOS inverters. The logic gates presented are designed using semi floating-gate transistors and a current boost technique. The boolean gates resemble domino CMOS. The performance and robustness of different...

متن کامل

Novel High-Speed and Ultra-Low-Voltage CMOS NAND and NOR Domino Gates

In this paper we present novel ultra-low-voltage and high-speed CMOS NAND and NOR gates. For supply voltages below 500mV the delay for an ultra-low-voltage NAND2 gate is approximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch are much lesser than for conventional CMOS. Differential domino gates for AND2/NAND2 and OR2/NOR2 operation are presented. Ul...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009